ll101a thru ll101c vishay semiconductors formerly general semiconductor document number 88205 www.vishay.com 13-may-02 1 schottky diodes features ?for general purpose applications ?the ll101 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring. ?the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications. ?this diode is also available in the do-35 case with type designation sd101a, b, c and in the sod- 123 case with type designation sd101aw, sd101bw, sd101cw. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit ll101a 60 peak inverse voltage LL101B v rrm 50 v ll101c 40 power dissipation (infinite heatsink) p tot 400 (1) mw maximum single cycle surge 10 s square wave i fsm 2a thermal resistance junciton to ambient r ja 300 (1) cw junction temperature t j 125 c storage temperature range t s 55 to +150 c note: (1) valid provided that electrodes are kept at ambient temperature. mechanical data case: minimelf glass case (sod-80) weight: approx. 0.05g cathode band color: green packaging codes/options: d1/10k per 13 reel (8mm tape), 20k/box d2/2.5k per 7 reel (8mm tape), 20k/box .146 (3.7) .019 (0.48) cathode band .130 (3.3) .051 (1.3) .011 (0.28) .063 (1.6) dia. minimelf (sod-80c) dimensions in inches and (millimeters)
ll101a thru ll101c vishay semiconductors formerly general semiconductor www.vishay.com document number 88205 2 13-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit ll101a 60 reverse breakdown voltage LL101B v (br)r i r = 10 a 50 v ll101c 40 ll101a v r = 50v 200 leakage current LL101B i r v r = 50v 200 na ll101c v r = 50v 200 ll101a 0.41 LL101B v f i f = 1ma 0.4 v forward voltage drop ll101c 0.39 ll101a 1 LL101B v f i f = 15ma 0.95 v ll101c 0.9 ll101a 2.0 junction capacitance LL101B c tot v r = 0v, f = 1mhz 2.1 pf ll101c 2.2 reverse recovery time t rr i f = i r = 5ma, 1ns recover to 0.1i r
ll101a thru ll101c vishay semiconductors formerly general semiconductor document number 88205 www.vishay.com 13-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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